Advanced Data Encryption ​using 2D Materials.

Area of Science:

• Materials Science
• Electrical Engineering
• Cryptography

Background:

• Advanced data encryption relies on true random number generators (TRNGs) for unpredictable bit sequences.
• Metal/insulator/metal (MIM) devices utilizing random telegraph noise (RTN) are potential entropy sources for TRNGs.
• Traditional insulators in MIM devices exhibit unstable RTN due to defect cluster expansion, limiting TRNG performance.

Purpose of the Study:

• To develop highly stable TRNG circuits with low power consumption and high randomness.
• To investigate the use of multilayer hexagonal boron nitride (h-BN) in MIM devices for improved RTN stability.
• To demonstrate the application of h-BN based TRNGs for secure applications like one-time passwords.

Main Methods:

• Fabrication of MIM devices using multilayer hexagonal boron nitride (h-BN) as the insulator.
• Characterization of RTN signals produced by h-BN based MIM devices.
• Evaluation of TRNG performance, including randomness, stability, and throughput.

Main Results:

• Achieved highly stable TRNG circuits with low power consumption.
• Demonstrated high degree of randomness for long bit strings (2^24 - 1 bits).
• Obtained a high throughput of 1 Mbit s^-1 for the h-BN based TRNGs.
• Showcased the successful application of these TRNGs for generating one-time passwords.

Conclusions:

• Multilayer h-BN MIM devices offer superior stability for RTN generation compared to traditional oxides.
• The crystalline and layered structure of h-BN, with confined defects, prevents lateral expansion and ensures stable RTN.
• h-BN based TRNGs are suitable for secure, low-power applications like internet-of-everything devices and one-time password generation.