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Durable Defect Passivation of the Grain Surface in Perovskite Solar Cells with π-Conjugated Sulfamic Acid Additives
Kun Cao1, Yue Huang1, Mengru Ge1
1State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, 9 Wenyuan Road, Nanjing 210023, China.
Abstract:
Defect passivation has shown an essential role in improving the efficiency and stability of perovskite solar cells (PSCs). Herein, an efficient and low-cost π-conjugated sulfamic acid additive, 4-aminobenzenesulfonic acid (4-ABSA), is used to realize durable defect passivation of PSCs. The incorporation of 4-ABSA not only constructs a compact and smooth perovskite film but is also capable of passivating both negative- and positive-charged defects derived from under-coordinated lead and halogen ions. Besides, the π-conjugated system in 4-ABSA can induce preferred perovskite crystal orientation and stabilize the coordination effect between 4-ABSA and perovskite grains. As a result, the inverted planar PSC incorporated with 4-ABSA additives demonstrates an improved power conversion efficiency (PCE) from 18.25 to 20.32%. Moreover, this 4-ABSA passivation agent also enhances the stability of devices, which retains 83.5% of its initial efficiency under ambient condition at 60 °C after 27 days. This work provides a π-conjugated sulfamic acid for durable defect passivation of perovskite optoelectronic devices.
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