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Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry.

Seongin Hong1,2, Nicolò Zagni3, Sooho Choo1

  • 1School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea.

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|June 12, 2021
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Summary
This summary is machine-generated.

Researchers developed a novel active pixel image sensor using bilayer molybdenum disulfide (MoS2). This MoS2 image sensor achieved high photoresponsivity, paving the way for advanced electronic and photonic applications.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Electronics

Background:

  • Two-dimensional transition metal dichalcogenides (TMDs) are promising for electronics and photonics.
  • Large-area growth methods for TMDs are advancing but not yet applied to image sensors.

Purpose of the Study:

  • To develop an active pixel image sensor array using bilayer molybdenum disulfide (MoS2).
  • To investigate the photoresponsivity and image-sensing capabilities of the MoS2-based sensor.

Main Methods:

  • Utilized a two-step large-area growth method to prepare bilayer MoS2 films.
  • Fabricated an 8 × 8 active pixel image sensor array comprising MoS2 switching and phototransistors.
  • Employed computational modeling to understand the photoresponse mechanism.

Main Results:

  • Achieved a maximum photoresponsivity (Rph) of 119.16 A/W in the bilayer MoS2 phototransistors.
  • Identified a photo-gating effect due to trapped holes at subgap states as the primary mechanism for high Rph.
  • Successfully demonstrated image sensing using light stencil projection on the MoS2 active pixel image sensor array.

Conclusions:

  • Bilayer MoS2 is a viable material for high-performance active pixel image sensors.
  • The photo-gating effect significantly enhances phototransistor performance.
  • This work opens new avenues for large-area 2D material-based image sensing technologies.