A T-shaped gate tunneling field effect transistor with negative capacitance, super-steep subthreshold swing

Area of Science:

• Semiconductor device physics
• Materials science for electronics

Background:

• Traditional Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) face limitations in high performance and low power consumption due to continuous size reduction.
• Tunneling Field Effect Transistors (TFETs) are emerging as a promising low-power alternative.

Purpose of the Study:

• To propose and investigate a novel T-shaped gate TFET incorporating negative capacitance (NC-TGTFET) for enhanced electronic characteristics.
• To analyze the impact of ferroelectric material properties and device geometry on NC-TGTFET performance.

Main Methods:

• Device simulation using Sentaurus TCAD.
• Analysis of tunneling junction behavior, subthreshold swing, and on-state current.
• Parametric study on thickness, doping concentration, and ferroelectric material properties.

Main Results:

• The NC-TGTFET exhibits distinct tunneling junction opening orders and sensitivities compared to traditional TGTFETs.
• A very steep subthreshold swing of 18.32 mV/dec was achieved.
• The on-state current reached 1.52 × 10^-6 Aμm^-1 at Vg=0.5 V and Vd=0.5 V.

Conclusions:

• The integration of negative capacitance ferroelectric material (HZO) in T-shaped gate TFETs significantly improves subthreshold swing.
• The proposed NC-TGTFET demonstrates potential for next-generation low-power high-performance electronic devices.