Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides

Nan Liu1,2, Yi Cao1,2, Yin-Lian Zhu1

  • 1Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China.

Summary

Researchers developed a stable, uniform nanocomposite for resistive random-access memory (RRAM). This material, a biphasic system of (Bi,La)FeO3-δ, offers electroforming-free operation and enhanced endurance for RRAM applications.

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