Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides

Common pursuits of developing nanometric logic and neuromorphic applications have motivated intensive research studies into low-dimensional resistive random-access memory (RRAM) materials. However, fabricating resistive switching medium with inherent stability and homogeneity still remains a bottleneck. Herein, we report a self-assembled uniform biphasic system, comprising low-resistance 3 nm-wide (Bi_0.4,La_0.6)FeO_3-δ nanosheets coherently embedded in a high-resistance (Bi_0.2,La_0.8)FeO_3-δ matrix, which were spinodally decomposed from an overall stoichiometry of the (Bi_0.24,La_0.76)FeO_3-δ parent phase, as a promising nanocomposite to be a stable and endurable RRAM medium. The Bi-rich nanosheets accommodating high concentration of oxygen vacancies as corroborated by X-ray photoelectron spectroscopy and electron energy loss spectroscopy function as fast carrier channels, thus enabling an intrinsic electroforming-free character. Surficial electrical state and resistive switching properties are investigated using multimodal scanning probe microscopy techniques and macroscopic I-V measurements, showing high on/off ratio (∼10³) and good endurance (up to 1.6 × 10⁴ cycles). The established spinodal decomposition-driven phase-coexistence BLFO system demonstrates the merits of stability, uniformity, and endurability, which is promising for further application in RRAM devices.