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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Simulation and Modeling of Novel Electronic Device Architectures with NESS (Nano-Electronic Simulation Software): A

Cristina Medina-Bailon1,2, Tapas Dutta1, Ali Rezaei1

  • 1Device Modelling Group, School of Engineering, University of Glasgow, Glasgow G12 8LT, UK.

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Summary

This study introduces Nano-Electronic Simulation Software (NESS), a multi-scale TCAD tool for simulating nano-electronic devices. NESS accurately models quantum effects in advanced transistors, optimizing semiconductor performance.

Keywords:
Kubo-GreenwoodNegative Capacitance FETs (NCFET)drift-diffusionintegrated simulation environmentnanowire transistors (NWT)non-equilibrium Green’s functionquantum correctionresonant tunneling diodes (RTD)tunnel FETs (TFET)

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Area of Science:

  • Nano-electronics
  • Computational physics
  • Semiconductor device modeling

Background:

  • Modeling nano-electronic devices is crucial for optimizing performance and guiding fabrication.
  • Ultra-scaled devices require advanced simulation techniques to capture complex charge transport phenomena.

Purpose of the Study:

  • To present the capabilities of the new flexible multi-scale nano TCAD simulation software, Nano-Electronic Simulation Software (NESS).
  • To showcase NESS's ability to simulate charge transport in contemporary and novel ultra-scaled semiconductor devices, including quantum mechanical effects.

Main Methods:

  • Developed multiple simulation modules (drift-diffusion, Kubo-Greenwood, NEGF) implemented in C++.
  • Linked and self-consistently solved modules with the Poisson equation for accurate charge transport simulation.
  • Deployed NESS modules to simulate advanced nano-scale devices like nanowire transistors and tunnel transistors.

Main Results:

  • NESS accurately predicts and describes the underlying physics in novel ultra-scaled electronic devices.
  • Simulations covered state-of-the-art and future technologies where quantum effects are significant.
  • Demonstrated NESS as a robust, fast, and reliable simulation platform.

Conclusions:

  • NESS is a powerful and versatile tool for simulating advanced nano-electronic devices.
  • The software accurately captures quantum mechanical effects essential for next-generation electronics.
  • NESS facilitates the optimization of semiconductor device performance and fabrication technology.