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Updated: Oct 30, 2025

Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes
Yi-Jie Chao1, Kai-Wei Yang1, Chi Su1
1Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Abstract:
This work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapting the novel PID detectors, the maximum charging levels of the detectors have been enhanced.
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