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Electrochemical Impedance Spectroscopy as a Tool for Electrochemical Rate Constant Estimation

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Extraction of acceptor concentration map from EBIC experiments.

O Marcelot¹, P Magnan¹

¹ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.

Ultramicroscopy

|July 3, 2021

Summary

This summary is machine-generated.

This study introduces a new method to map acceptor concentration using a single Electron Beam Induced Current (EBIC) image. This technique aids in analyzing semiconductor devices and processed substrates.

Keywords:

CMOS Doping concentration Electron Beam Induced Current Image sensor Scanning Electron Microscopy (SEM)Simulation

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Area of Science:

Semiconductor device analysis
Materials science
Doping profile characterization

Background:

Accurate control and characterization of two-dimensional doping distributions are crucial for semiconductor device fabrication and performance.
Existing methods for mapping doping concentrations can be complex or limited in scope.

Purpose of the Study:

To develop a novel methodology for obtaining qualitative maps of acceptor concentration from a single Electron Beam Induced Current (EBIC) image.
To enable efficient quality control of processed substrates and specific semiconductor devices.

Main Methods:

Utilizing analytical models to determine optimal experimental conditions for EBIC imaging.
Employing Technology Computer-Aided Design (TCAD) simulations for validation on realistic device structures.
Performing experimental measurements on actual semiconductor devices.

Main Results:

The proposed EBIC-based methodology successfully generated qualitative maps of acceptor concentration.
TCAD simulations demonstrated the promising potential of the approach.
Experimental measurements clearly visualized the epitaxy gradient and the presence of Pwell layers in a device.

Conclusions:

The new EBIC imaging methodology provides an effective means for characterizing 2D doping distributions.
This technique offers a valuable tool for quality assessment in semiconductor manufacturing.
The results confirm the feasibility and utility of the approach for device analysis.