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A new TCAD simulation method for direct CMOS electron detectors optimization.

O Marcelot¹, C Marcelot², F Corbière¹

¹ISAE-SUPAERO, 10 avenue Edouard Belin, 31055 Toulouse, France.

Ultramicroscopy

|November 13, 2022

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Researchers characterized a custom CMOS image sensor using a transmission electron microscope and a novel simulation method. This approach successfully extracted key parameters, validating a new simulation technique for future electron detector development.

Area of Science:

Materials Science
Semiconductor Physics
Imaging Technology

Background:

Characterizing custom CMOS image sensors is crucial for advanced imaging applications.
Transmission electron microscopy (TEM) is a standard tool for high-resolution imaging.
Extracting detector parameters like quantum efficiency is essential for performance evaluation.

Purpose of the Study:

To characterize a custom, radiation-hardened CMOS image sensor.
To extract key performance parameters: quantum efficiency, modulation transfer function, and detective quantum efficiency.
To develop and validate a new simulation methodology for direct CMOS electron detectors.

Main Methods:

Experimental characterization using a transmission electron microscope (TEM).

Keywords:

CMOS CMOS integrated circuits Electrons Image sensor Semiconductor detectors Semiconductor device modelling Simulation Transmission electron microscopy

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Development of a novel simulation methodology combining Monte Carlo (MC) electron distribution simulations with Technology Computer-Aided Design (TCAD) simulations.

Validation of the simulation methodology by comparing simulation results with experimental data.

Main Results:

Basic parameters of the direct CMOS electron detector were successfully extracted using the proposed simulation methodology.
The TCAD-based simulation approach provided accurate extraction of detector parameters for the first time.
Experimental and simulation results showed good agreement, validating the new methodology.

Conclusions:

The developed simulation methodology, integrating MC and TCAD, is effective for characterizing direct CMOS electron detectors.
This validated simulation approach can guide the design and development of future electron detectors.
The study demonstrates the potential of TCAD simulations in advancing detector physics and engineering.