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Suppression of dynamic disorder by electrostatic interactions in structurally close organic semiconductors
Andrey Yu Sosorev1, Olga D Parashchuk2, Nikita V Tukachev3
1Institute of Spectroscopy of the Russian Academy of Sciences, Fizicheskaya Str., 5, Troitsk, Moscow 108840, Russia. sosorev@physics.msu.ru and Faculty of Physics, M.V. Lomonosov Moscow State University, Leninskie Gory 1/62, Moscow 119991, Russia. paras@physics.msu.ru.
Abstract:
Dynamic disorder manifested in fluctuations of charge transfer integrals considerably hinders charge transport in high-mobility organic semiconductors. Accordingly, strategies for suppression of the dynamic disorder are highly desirable. In this study, we suggest a novel promising strategy for suppression of dynamic disorder-tuning the molecular electrostatic potential. Specifically, we show that the intensities of the low-frequency (LF) Raman spectra for crystalline organic semiconductors consisting of π-isoelectronic small molecules (i.e. bearing the same number of π electrons)-benzothieno[3,2-b][1]benzothiophene (BTBT), chrysene, tetrathienoacene (TTA) and naphtho[1,2-b:5,6-b']dithiophene (NDT)-differ significantly, indicating significant differences in the dynamic disorder. This difference is explained by suppression of the dynamic disorder in chrysene and NDT because of stronger intermolecular electrostatic interactions. As a result, guidelines for the increase of the crystal rigidity for the rational design of high-mobility organic semiconductors are suggested.
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