Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Multibridge channel field-effect transistors (MBCFETs) offer enhanced gate control and drive current for next-generation architectures.
• Limitations in silicon nanosheet thickness (<5 nm) reduce mobility, while stacking channels increases leakage current.

Purpose of the Study:

• To demonstrate a 2D ultrathin MBCFET using MoS2 channels to overcome limitations of Si-based MBCFETs.
• To achieve high drive current with minimal leakage in a novel MBCFET design.

Main Methods:

• Fabrication of a 2D ultrathin MBCFET utilizing 2 nm/2 nm MoS2 channels.
• Characterization of device performance, including drive current, leakage current, subthreshold swing, and on/off ratio at room temperature.

Main Results:

• The MoS2 MBCFET exhibited a normalized drive current exceeding that of advanced Si MBCFETs.
• Achieved significantly lower leakage current (0.4%), a subthreshold swing of 60 mV/dec, and an on/off ratio of 4x10^8.
• Demonstrated potential for further drive current enhancement by adjusting operation voltage polarity.

Conclusions:

• The 2D ultrathin MoS2 MBCFET represents a significant advancement over Si-based devices.
• Combining 2D materials with MBC structures offers a promising route for high-performance, low-power electronics.