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Updated: Oct 25, 2025

Synthesis of Substrate-Bound Au Nanowires Via an Active Surface Growth Mechanism
Published on: July 18, 2018
Compositional Correlation between the Nanoparticle and the Growing Au-Assisted InGa1-As Nanowire
Robin Sjökvist1,2, Daniel Jacobsson1,2,3, Marcus Tornberg1,2
1Centre for Analysis and Synthesis, Lund University, Box 124, 22100 Lund, Sweden.
Abstract:
The nanowire geometry is favorable for the growth of ternary semiconductor materials, because the composition and properties can be tuned freely without substrate lattice matching. To achieve precise control of the composition in ternary semiconductor nanowires, a deeper understanding of the growth is required. One unknown aspect of seeded nanowire growth is how the composition of the catalyst nanoparticle affects the resulting composition of the growing nanowire. We report the first in situ measurements of the nanoparticle and InGa1-As nanowire compositional relationship using an environmental transmission electron microscopy setup. The compositions were measured and correlated during growth, via X-ray energy dispersive spectroscopy. Contrary to predictions from thermodynamic models, the experimental results do not show a miscibility gap. Therefore, we construct a kinetic model that better predicts the compositional trends by suppressing the miscibility gap. The findings imply that compositional control of InGa1-As nanowires is possible across the entire compositional range.

