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Updated: Oct 25, 2025

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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
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Spectroscopy of NbSe2 Using Energy-Tunable Defect-Embedded Quantum Dots.
T R Devidas1, Itai Keren1, Hadar Steinberg1
1The Racah Institute of Physics, The Center for Nanoscience and Nanotechnology, The Hebrew University, Jerusalem 91904, Israel.
Nano Letters
|August 5, 2021
Summary
Quantum dots enable high-resolution spectroscopy of the superconductor NbSe2. Researchers observed a two-gap spectrum in NbSe2, with current dominated by the lower energy gap.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Engineering
Background:
- Quantum dots possess discrete energy levels, ideal for high-resolution spectroscopy.
- Superconductors like NbSe2 exhibit unique electronic properties.
Purpose of the Study:
- To perform dot-assisted spectroscopy on the superconductor NbSe2.
- To investigate the electronic density of states of NbSe2 using quantum dots.
Main Methods:
- Fabrication of a van der Waals heterostructure device (graphene-MoS2-NbSe2).
- Utilizing naturally occurring defects in MoS2 as quantum dots for resonant tunneling.
- Employing back-gate electric fields to tune quantum dot energy levels.
Main Results:
- Successfully reproduced the density of states of NbSe2, revealing a two-gap spectrum.
- Observed that dot-assisted current is predominantly influenced by the lower energy gap of NbSe2.
- Hypothesized a selection rule governing the coupling between quantum dots and NbSe2 energy states.
Conclusions:
- Quantum dot-assisted spectroscopy is a viable method for probing superconductor electronic structures.
- The results provide insights into the complex electronic behavior and superconducting gaps of NbSe2.
- Further investigation is needed to fully understand the observed selection rule and its implications.
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