Related Experiment Video
Updated: Oct 24, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Single-electron spin resonance in a nanoelectronic device using a global field
Ensar Vahapoglu1, James P Slack-Smith1, Ross C C Leon2
1School of Electrical Engineering and Telecommunications, UNSW Sydney, Sydney, NSW 2052, Australia. e.vahapoglu@unsw.edu.au j.slack-smith@unsw.edu.au a.dzurak@unsw.edu.au jarryd@unsw.edu.au.
Abstract:
Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence times afforded by spins in silicon. Advancing from current few-qubit devices to silicon quantum processors with upward of a million qubits, as required for fault-tolerant operation, presents several unique challenges, one of the most demanding being the ability to deliver microwave signals for large-scale qubit control. Here, we demonstrate a potential solution to this problem by using a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit. Critically, this technique uses only a single microwave source and is capable of delivering control signals to millions of qubits simultaneously. We show that the global field can be used to perform spin resonance of single electrons confined in a silicon double quantum dot device, establishing the feasibility of this approach for scalable spin qubit control.
Related Concept Videos
Atomic Nuclei: Nuclear Spin State Overview
Atomic Nuclei: Magnetic Resonance
Double Resonance Techniques: Overview
Spin decoupling is usually achieved by...
Atomic Nuclei: Nuclear Relaxation Processes
NMR Spectroscopy: Spin–Spin Coupling
NMR Spectrometers: Resolution and Error Correction

