Single-electron spin resonance in a nanoelectronic device using a global field

Area of Science:

• Quantum Computing
• Solid-State Physics
• Nanoelectronics

Background:

• Silicon quantum electronic circuits offer a scalable platform for quantum computation due to manufacturability and long spin coherence times.
• Scaling silicon quantum processors to millions of qubits requires efficient, large-scale control signal delivery, a significant challenge.

Purpose of the Study:

• To demonstrate a scalable solution for delivering microwave control signals to a large number of qubits in silicon quantum electronic circuits.
• To establish the feasibility of using a global microwave field for spin qubit control.

Main Methods:

• Utilized a three-dimensional dielectric resonator to broadcast a global microwave signal across a quantum nanoelectronic circuit.
• Employed a single microwave source to deliver control signals simultaneously to multiple qubits.
• Performed spin resonance of single electrons in a silicon double quantum dot device using the global field.

Main Results:

• Successfully broadcast a global microwave signal across a quantum nanoelectronic circuit using a 3D dielectric resonator.
• Demonstrated simultaneous control signal delivery to millions of qubits from a single microwave source.
• Showcased the ability to perform spin resonance of single electrons in a silicon double quantum dot device.

Conclusions:

• The 3D dielectric resonator technique provides a viable solution for scalable spin qubit control in silicon quantum processors.
• This approach overcomes a critical challenge in advancing from few-qubit devices to large-scale, fault-tolerant quantum computation.
• The demonstrated method is essential for realizing the potential of silicon-based quantum computing.