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Updated: Oct 22, 2025

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Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode

Yang Dai1, Qingsong Ye1, Jiangtao Dang1

  • 1School of Information Science and Technology, Northwest University, Xi'an 710127, China.

Micromachines
|August 27, 2021
PubMed

Keywords:
Heterostructuredouble-drift region (DDR)gallium nitride (GaN)impact ionization avalanche transit time (IMPATT)silicon carbide (SiC)

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