Oxygen Vacancy Dynamics in Highly Crystalline Zinc Oxide Film Investigated by PIERS Effect

Surface-enhanced Raman spectroscopy (SERS) is commonly employed as an analysis or detection tool of biological and chemical molecules. Recently, an alternative section of the SERS field has appeared, called photo-induced enhanced Raman spectroscopy (PIERS). This PIERS effect is based on the production of the oxygen vacancies (V0) in metal-oxide semiconductor thin-film (or other structures) by irradiation with UV light, thus enabling a Raman signal enhancement of chemical molecules through charge transfer processes between this photo-irradiated semiconductor film (or other structures) and these chemical molecules via metallic nanoparticles deposited on this photo-irradiated substrate. The PIERS technique can enable studying the dynamics of the oxygen vacancies under ambient and operando conditions compared to conventional tools of analysis. In this paper, we present the results obtained on the formation and healing rates of surface oxygen vacancies (V0) in a highly crystalline ZnO film investigated by the PIERS effect, and we compare these results to the literature in order to study the effect of the crystallinity on these formation and healing rates of V0 in a ZnO film.