Cobalt Oxide-Decorated Silicon Carbide Nano-Tree Array Electrode for Micro-Supercapacitor Application

A cobalt oxide (Co₃O₄)-decorated silicon carbide (SiC) nano-tree array (denoted as Co₃O₄/SiC NTA) electrode is synthesized, and it is investigated for use in micro-supercapacitor applications. Firstly, the well-standing SiC nanowires (NWs) are prepared by nickel (Ni)-catalyzed chemical vapor deposition (CVD) method, and then the thin layer of Co₃O₄ and the hierarchical Co₃O₄ nano-flower-clusters are, respectively, fabricated on the side-walls and the top side of the SiC NWs via electrodeposition. The deposition of Co₃O₄ on the SiC NWs benefits the charge transfer at the electrode/aqueous electrolyte interface due to its extremely hydrophilic surface characteristic after Co₃O₄ decoration. Furthermore, the Co₃O₄/SiC NTA electrode provides a directional charge transport route along the length of SiC nanowires owing to their well-standing architecture. By using the Co₃O₄/SiC NTA electrode for micro-supercapacitor application, the areal capacitance obtained from cyclic voltammetry measurement reaches 845 mF cm^-2 at a 10 mV s^-1 scan rate. Finally, the capacitance durability is also evaluated by the cycling test of cyclic voltammetry at a high scan rate of 150 mV s^-1 for 2000 cycles, exhibiting excellent stability.