Related Experiment Video
Updated: Oct 22, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Topological Phase and Quantum Anomalous Hall Effect in Ferromagnetic Transition-Metal Dichalcogenides Monolayer
Angus Huang1,2, Chin-Hsuan Chen1, Ching-Hao Chang2
1Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
Abstract:
Magnetic two-dimensional (2D) van der Waals materials have attracted tremendous attention because of their high potential in spintronics. In particular, the quantum anomalous Hall (QAH) effect in magnetic 2D layers shows a very promising prospect for hosting Majorana zero modes at the topologically protected edge states in proximity to superconductors. However, the QAH effect has not yet been experimentally realized in monolayer systems to date. In this work, we study the electronic structures and topological properties of the 2D ferromagnetic transition-metal dichalcogenides (TMD) monolayer 1T-VSe2 by first-principles calculations with the Heyd-Scuseria-Ernzerhof (HSE) functional. We find that the spin-orbit coupling (SOC) opens a continuous band gap at the magnetic Weyl-like crossing point hosting the quantum anomalous Hall effect with Chern number C=2. Moreover, we demonstrate the topologically protected edge states and intrinsic (spin) Hall conductivity in this magnetic 2D TMD system. Our results indicate that 1T-VSe2 monolayer serves as a stoichiometric quantum anomalous Hall material.
More Related Videos
Related Concept Videos
Ferromagnetism
The Hall Effect
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Theory of Metallic Conduction
In this theory, Newton's second law of motion is used to determine the acceleration of an electron in the presence of an applied electric field. Then, its velocity is expressed via this acceleration.
An electron moves through the crystal, containing positive ions,...
Phase Transitions: Sublimation and Deposition

