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Resolving the On-Off Ratio Discrepancy in Bilayer 3R-MoS2 FeSFETs: Dual Mechanisms of Domain Wall Engineering
Yee-Heng Teh1, Horng-Tay Jeng1,2,3,4
1Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan.
Nano Letters
|January 29, 2026
Summary
Domain walls in bilayer molybdenum disulfide (MoS2) ferroelectric semiconductor field-effect transistors (FeSFETs) enhance device performance. These domain walls improve polarization and suppress OFF-state current, boosting ON-OFF ratios.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Bilayer 3R-MoS2 ferroelectric semiconductor field-effect transistors (FeSFETs) typically rely on polarization switching for ON-OFF operation.
- The electronic properties of domain walls (DWs) in MoS2 have been overlooked in previous studies.
Purpose of the Study:
- To investigate the impact of domain walls (DWs) on the electronic properties and performance of bilayer 3R-MoS2 FeSFETs.
- To explore DWs as a mechanism for enhancing FeSFET performance.
Main Methods:
- Density functional theory (DFT) calculations.
- Non-equilibrium Green's function (NEGF) methods.
Main Results:
- DW formation induces electronic reconstruction, enhancing polarization in neighboring ferroelectric domains.
- Local compressive strain at DWs increases the conduction band minimum, suppressing OFF-state current.
- FeSFETs with DWs show significantly improved ON-OFF ratios (99.1 for armchair, 33.5 for zigzag) compared to pristine devices (6.5 and 3.8, respectively).
Conclusions:
- Domain walls in MoS2 FeSFETs play a crucial role in device performance beyond simple polarization switching.
- DWs enhance polarization and suppress conductance, offering a novel strategy for improving MoS2-based FeSFETs.
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