GaO@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity
Yu-Hang Ji1, Qin Gao1, An-Ping Huang1
1School of Physics, Beihang University, Beijing 100191, China.
ACS Applied Materials & Interfaces
|August 27, 2021
Summary
Researchers developed flexible amorphous oxide-decorated Gallium Nitride nanowire arrays (GaO@GaN NWAs) for bioinspired neural networks. These devices exhibit tunable persistent photoconductivity, enabling advanced neuromorphic systems.
Area of Science:
- Materials Science
- Nanotechnology
- Neuroscience
Background:
- Flexible optoelectronic synaptic devices are essential for advanced bioinspired neural networks.
- Mimicking neural behavior requires tunable optoelectronic characteristics.
Purpose of the Study:
- To develop flexible amorphous oxide-decorated Gallium Nitride nanowire arrays (GaO@GaN NWAs).
- To investigate their tunable persistent photoconductivity (PPC) and fast/slow decay processes (SDP).
- To explore their potential for flexible neuromorphic systems.
Main Methods:
- Fabrication of GaO@GaN NWAs on flexible graphite paper.
- Characterization of device optoelectronic properties under varying light and bias conditions.
- Analysis of persistent photoconductivity and decay dynamics.
Main Results:
- Achieved tunable PPC and a convertible fast/slow decay process (SDP).
- Demonstrated modulation of photoconductivity via single/double light pulses.
- Observed a high-performance SDP with a long decay time of 2.3 × 10^5 s.
- Proposed and discussed the modulation mechanism.
Conclusions:
- Presented an innovative strategy for producing decorated NWAs on flexible substrates.
- Highlighted the tunable optoelectronic properties of the developed devices.
- Showcased significant potential for flexible neuromorphic system applications.
