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Updated: Oct 20, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Tungsten disulfide thin films via electrodeposition from a single source precursor
Shibin Thomas1, Victoria K Greenacre1, Danielle E Smith1
1School of Chemistry, University of Southampton, Southampton SO17 1BJ, UK. shibin.thomas@soton.ac.uk.
Abstract:
We report a simple process for the electrodeposition of tungsten disulfide thin films from a CH2Cl2-based electrolyte using a tailored single source precursor, [NEt4]2[WS2Cl4]. This new precursor incorporates the 1 : 2 W : S ratio required for formation of WS2, and eliminates the need for an additional proton source in the electrolyte to remove excess sulfide. The electrochemical behaviour of [NEt4]2[WS2Cl4] is studied by cyclic voltammetry and electrochemical quartz crystal microbalance techniques, and the WS2 thin films are grown by potentiostatic electrodeposition.
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