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Monolayer Boron Nitride: Hyperspectral Imaging in the Deep Ultraviolet
Adrien Rousseau1, Lei Ren2, Alrik Durand1
1Laboratoire Charles Coulomb, UMR5221 CNRS-Université de Montpellier, 34095 Montpellier, France.
Nano Letters
|September 16, 2021
Summary
Hexagonal boron nitride (hBN) was studied using deep-ultraviolet hyperspectral imaging. Researchers observed direct-gap emission in monolayer hBN and intense photoluminescence in few-layer hBN due to high radiative efficiency.
Area of Science:
- Materials Science
- Optics
- Condensed Matter Physics
Background:
- Two-dimensional (2D) materials and heterostructures are extensively researched for their optical properties.
- Hexagonal boron nitride (hBN), despite its prevalence, has been underexplored in its thinnest forms due to its ultrawide bandgap and deep-ultraviolet microscopy challenges.
Purpose of the Study:
- To investigate the optical response and luminescence properties of exfoliated few-layer and monolayer hexagonal boron nitride (hBN).
- To explore the potential of deep-ultraviolet hyperspectral imaging for characterizing hBN.
Main Methods:
- Hyperspectral imaging was performed at deep-ultraviolet wavelengths (around 200 nm) at low temperatures.
- Exfoliated flakes of hexagonal boron nitride (hBN) with thicknesses ranging from one to few layers were analyzed.
Main Results:
- Direct-gap emission was observed in monolayer hexagonal boron nitride (hBN) at approximately 6.1 eV.
- Photoluminescence signals were found to be intense in few-layer hBN, unlike transition metal dichalcogenides.
- Near-unity radiative efficiency was identified in indirect-gap multilayer hBN.
Conclusions:
- This study demonstrates the feasibility of deep-ultraviolet hyperspectral imaging for characterizing ultrathin hBN.
- The findings reveal distinct luminescence behaviors in monolayer and multilayer hBN, highlighting the importance of layer number and band structure on optical properties.
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