Ultraviolet photodetector based on p-borophene/n-ZnO heterojunction

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Borophene exhibits unique properties, making it promising for practical applications.
• Realizing borophene on various substrates is advancing, but device applications remain underexplored.
• Functional substrates are crucial for enabling borophene's potential applications.

Purpose of the Study:

• To grow hydrogenated borophene on a fluorine-doped tin oxide glass substrate.
• To fabricate a vertical heterojunction ultraviolet detector using p-borophene and n-zinc oxide.
• To investigate the performance of the fabricated borophene-based ultraviolet detector.

Main Methods:

• Growth of hydrogenated borophene on fluorine-doped tin oxide glass.
• Fabrication of a p-borophene/n-zinc oxide vertical heterojunction ultraviolet detector.
• Characterization of the detector's photoresponse, specific detectivity, and response speed under UV light.

Main Results:

• Hydrogenated borophene with a semiconducting δ₅-boron phase was successfully grown.
• The fabricated detector achieved a photoresponsivity of 1.02 × 10^-1 A W^-1.
• The detector exhibited a specific detectivity of 1.43 × 10⁹ Jones and response times of 2.8 s (rise) and 3.2 s (decay).

Conclusions:

• This work demonstrates the successful fabrication of a borophene-based ultraviolet detector.
• The findings highlight the potential of borophene in optoelectronic devices.
• This study lays the groundwork for future research into borophene applications in integrated circuits.