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Plasmon-Enhanced Light Absorption in (p-i-n) Junction GaAs Nanowire Solar Cells: An FDTD Simulation Method Study
E A Dawi1, A A Karar2, E Mustafa3
1Nonlinear Dynamics Research Centre (NDRC), Ajman University, P.O. Box 346, Ajman, United Arab Emirates. e.dawi@ajman.ac.ae.
Nanoscale Research Letters
|September 20, 2021
Summary
Gold nanoparticles enhance light absorption in gallium arsenide (GaAs) nanowire arrays, boosting solar cell efficiency. This plasmonic enhancement offers a promising route for developing next-generation photovoltaic devices.
Area of Science:
- Nanotechnology
- Materials Science
- Optoelectronics
Background:
- Gallium arsenide (GaAs) nanowires are crucial for advanced solar cells.
- Enhancing light absorption in nanowires is key to improving photovoltaic efficiency.
Purpose of the Study:
- To investigate plasmon enhancement of light absorption in Au-decorated GaAs nanowire arrays.
- To optimize nanoparticle parameters for maximum absorption enhancement.
Main Methods:
- Utilized a finite-difference time-domain (FDTD) method for optical simulations.
- Modeled vertically aligned GaAs nanowires functionalized with gold (Au) nanoparticles.
Main Results:
- Au nanoparticles significantly improve light absorption via plasmonic resonances.
- An absorption enhancement of nearly 35% at 800 nm was achieved by optimizing nanoparticle parameters.
- Enhanced absorption near the GaAs bandgap edge is most pronounced.
Conclusions:
- Plasmonic enhancement by Au nanoparticles is a viable strategy for boosting GaAs solar cell performance.
- Optimized Au-decorated GaAs nanowire arrays show potential for high-efficiency solar cells.
Keywords:
Au nanoparticlesField enhancementGaAs nanowireOptical simulationPhotoconversionSolar cellsSurface plasmon
