Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Oct 19, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.7K

Controllable Doping in 2D Layered Materials.

Zhen Wang1,2, Hui Xia1,2, Peng Wang1,2

  • 1State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.

Advanced Materials (Deerfield Beach, Fla.)
|September 27, 2021
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Back-end-of-line-compatible low-voltage operation in Hf<sub>0.5</sub> Zr<sub>0.5</sub>O<sub>2</sub> ferroelectric film enabled by <i>in-situ</i> lanthanum doping.

National science review·2026
Same author

Hybrid-gate MoS<sub>2</sub> 2T0C DRAM for low-power multi-bit storage with high linearity.

National science review·2026
Same author

Radiation-tolerant atomic-layer-scale RF system for spaceborne communication.

Nature·2026
Same author

Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS<sub>2</sub> transistors.

Nature materials·2026
Same author

Wafer-scale monolayer dielectric integration on atomically thin semiconductors.

Nature materials·2026
Same author

A Semi-floating Body Memory Featuring Brain-like Behaviors.

ACS applied materials & interfaces·2025
Same journal

Bioinspired Electrostatic-Field Perturbated Sensing for General Material Noncontact Perception.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Engineering Layered Magnetic Hydrogels for Cell Placement via Shear and Magnetic Field-Induced Assembly.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Interfacial Acid Sites-Mediated ZnO-Based Electrocatalysts for Sustainable Dual-Pathway H<sub>2</sub>O<sub>2</sub> Production and Rechargeable Zn-H<sub>2</sub>O<sub>2</sub> Electrochemical Cell.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Zein-Ceria Hybrid Microparticles Enable Long-Term ROS-Scavenging Oxygenation for Osteogenic Microtissues Engineering.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Toward Practical Solid-State Lithium Batteries With High-Nickel Cathodes: An Interface-Centered Perspective.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

A Planarity-Hindrance Co-Balance Strategy to Develop Antiparallel H-Aggregates With Minimal Absorbance Blueshift for Type I Photodynamic Therapy.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles
This summary is machine-generated.

Controlling semiconductor doping is key for electronics. This study reveals thickness-tuning of 2D materials like PtSSe and WSe2 enables precise p-type, intrinsic, and n-type doping for advanced devices.

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Semiconductor doping is crucial for electronic and optoelectronic applications.
  • Controllable doping of 2D materials presents significant challenges.
  • Existing methods lack continuous control over doping types (p-type, n-type).

Purpose of the Study:

  • To report a novel self-modulated doping characteristic in 2D layered materials.
  • To demonstrate controllable doping by varying the number of stacked monolayers.
  • To explore thickness-induced defect transitions for tuning semiconductor properties.

Main Methods:

  • Investigated 2D layered materials including PtSSe, PtS0.8 Se1.2 , PdSe2 , and WSe2.
  • Utilized varying numbers of vertically stacked monolayers to tune doping.
Keywords:
controllable dopingelectronic materialslattice deformationlayered materialsoptoelectronics

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.7K

Related Experiment Videos

Last Updated: Oct 19, 2025

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
09:45

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds

Published on: December 2, 2013

7.7K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.7K
  • Performed dynamic and thermodynamic analyses to understand defect behavior.

    • Main Results:

    • Demonstrated thickness-modulated doping from p-type to intrinsic to n-type in the same material.
    • Identified thickness-induced lattice deformation causing defect transitions (e.g., Pt vacancies to anion vacancies in PtSSe).
    • Achieved a high rectification ratio (4400) and open-circuit voltage (0.38 V) in WSe2 diodes.
    • Developed PtSSe detectors with reduced dark current for narrow-bandgap applications.

    Conclusions:

    • Thickness-modulated doping offers a new paradigm for 2D semiconductor control.
    • This method provides a pathway for developing high-performance 2D electronic and optoelectronic devices.
    • Findings offer novel perspectives for fundamental research and practical applications in 2D materials.