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Updated: Oct 18, 2025

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition

Published on: December 21, 2015

Solid-Phase Silicon Homoepitaxy via Shear-Induced Amorphization and Recrystallization.

Thomas Reichenbach^1,2, Gianpietro Moras¹, Lars Pastewka^1,3,4,5

¹Fraunhofer IWM, MicroTribology Center μTC, Wöhlerstraße 11, 79108 Freiburg, Germany.

Physical Review Letters

|October 1, 2021

Summary

This summary is machine-generated.

Mechanically induced phase transitions create a stable amorphous interface between silicon crystals. This process allows for triboepitaxial growth, enabling silicon nanofilm deposition via friction.

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Area of Science:

Materials Science
Tribology
Computational Materials Science

Background:

Tribological interfaces experience complex mechanical and phase transformations.
Understanding silicon crystal behavior under shear is crucial for nanoscale material fabrication.

Purpose of the Study:

To investigate mechanically induced phase transitions at silicon crystal tribological interfaces.
To elucidate the mechanisms of amorphous interface formation and triboepitaxial growth.

Main Methods:

Reactive molecular dynamics simulations were employed.
Analysis of shear-driven amorphization and recrystallization processes.

Main Results:

An amorphous shear interface with constant thickness was observed.
Anisotropic elastic properties drive interface migration, favoring growth of lower elastic energy density crystals.
Triboepitaxial growth was demonstrated through crystal misorientation and finite-size effects.

Conclusions:

The study reveals a novel mechanism for controlling silicon crystal growth at interfaces.
Direct deposition of homoepitaxial silicon nanofilms is achievable using a friction-based method.