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Robust Interlayer Exciton in WS2/MoSe2 van der Waals Heterostructure under High Pressure

Xiaoli Ma1, Shaohua Fu2, Jianwei Ding3,4

  • 1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

Nano Letters
|October 4, 2021
PubMed

Keywords:
band structureelectronic couplinghigh pressure engineeringinterlayer excitonvan der Waals heterostructures

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