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Photon detection probability enhancement using an anti-reflection coating in CMOS-based SPADs.
Applied Optics
|October 6, 2021
Summary
This study enhances photon detection probability (PDP) in CMOS single-photon avalanche diodes (SPADs) using anti-reflection coatings (ARCs). ARCs improve optical transmission and reduce standing wave interference for better SPAD performance.
Area of Science:
- Photonics
- Semiconductor Devices
- Optical Engineering
Background:
- CMOS single-photon avalanche diodes (SPADs) are crucial for low-light imaging.
- Photon detection probability (PDP) is a key performance metric for SPADs.
- Optical interference effects can limit SPAD performance.
Purpose of the Study:
- To investigate the enhancement of PDP in CMOS SPADs using anti-reflection coatings (ARCs).
- To analyze the mechanisms by which ARCs improve PDP.
- To determine optimal ARC thickness for maximum PDP enhancement across the visible spectrum.
Main Methods:
- Combined simulation and experimental study of SPADs with ARCs.
- Optical modeling to analyze light transmission and standing wave effects.
- Fabrication and characterization of SPAD devices with varying ARC thicknesses.
Main Results:
- ARCs significantly enhance PDP in CMOS SPADs.
- ARC improves PDP by increasing optical transmission and mitigating standing wave penetration into the SPAD multiplication region.
- Optimal ARC thickness for maximum PDP enhancement varies with wavelength.
Conclusions:
- ARCs are an effective method for boosting SPAD performance.
- Understanding optical effects is critical for SPAD design and optimization.
- Tailoring ARC thickness can optimize SPADs for specific spectral ranges.
