Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

554
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
554
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

568
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
568
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

515
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
515
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

365
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
365
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.0K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.0K
Field Effect Transistor01:29

Field Effect Transistor

676
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
676

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Multi-State Memory in 2D Magnets via Thickness-Engineered Growth.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Realization of room-temperature magnetism and multistep magnetization switching in 2D metallic ferrimagnets.

Science advances·2026
Same author

Enhancing Hole Mobility in Monolayer WSe<sub>2</sub> p-Type Field-Effect Transistors via Process-Induced Compression.

ACS nano·2026
Same author

Nonvolatile Sequential Logic Enabled by CuInP<sub>2</sub>S<sub>6</sub> van der Waals Ferroelectric Field-Effect Transistors.

ACS nano·2026
Same author

Bamboo-Inspired bionic microfluidic Reactor: Construction and application for industrial Biocatalysis.

Bioresource technology·2026
Same author

Monolithic three-dimensional integration of silicon transistors.

Nature·2026

Related Experiment Video

Updated: Oct 16, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.8K

Nonvolatile Reconfigurable 2D Schottky Barrier Transistors.

Zijing Zhao1,2, Shaloo Rakheja1,2, Wenjuan Zhu1,2

  • 1Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.

Nano Letters
|October 22, 2021
PubMed
Summary

Researchers developed nonvolatile reconfigurable transistors using 2D heterostructures. These devices dynamically switch between n-type and p-type, enabling flexible logic circuits and tunable optoelectronic applications.

Keywords:
2D ferroelectric heterostructureReconfigurable logic transistorcopper indium thiophosphate (CuInP2S6)molybdenum ditelluride (MoTe2)

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.9K

Related Experiment Videos

Last Updated: Oct 16, 2025

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.8K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.7K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.9K

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Device Physics

Background:

  • Nonvolatile reconfigurable transistors are crucial for low-power, flexible logic circuits.
  • Existing technologies face challenges in achieving dynamic programmability and nonvolatility.
  • Two-dimensional (2D) materials offer unique properties for novel electronic devices.

Purpose of the Study:

  • To engineer nonvolatile reconfigurable transistors using 2D CuInP2S6/MoTe2 heterostructures.
  • To investigate ferroelectric polarization-induced doping effects in these heterostructures.
  • To demonstrate dynamically programmable Schottky barrier transistors with tunable optoelectronic responses.

Main Methods:

  • Fabrication of 2D CuInP2S6/MoTe2 heterostructure-based transistors.
  • Characterization of ferroelectric polarization and its impact on carrier doping (electron and hole).
  • Electrical and photoresponse measurements of reconfigurable Schottky barrier transistors with varying contact doping.

Main Results:

  • Demonstrated nonvolatile reconfigurable transistors with dynamically programmable n-type or p-type polarity.
  • Observed tunable photoresponse: negative photocurrent in n-n doping and positive photocurrent in p-p doping states.
  • Showcased a strong photovoltaic effect in transistors with asymmetric (n-p or p-n) contacts.

Conclusions:

  • Ferroelectric doping in 2D heterostructures enables nonvolatile reconfigurable transistors.
  • These devices offer potential for flexible logic circuits and advanced optoelectronic applications.
  • The developed transistors pave the way for new device fabrics in computing and sensing.