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Study on Cross-Coupled-Based Sensing Circuits for Nonvolatile Flip-Flops Operating in Near/Subthreshold Voltage
1Department of Electronics Engineering, Incheon National University, Incheon 22012, Korea.
This study introduces a novel cross-coupled NMOS-based sensing circuit (CCN-SC) for nonvolatile flip-flops (NV-FFs). The CCN-SC significantly enhances restore yield in near/subthreshold voltage regions, outperforming complex designs.
Area of Science:
- Electrical Engineering
- Computer Engineering
Background:
- Traditional nonvolatile flip-flop (NV-FF) designs often employ complex circuits for offset cancellation.
- These complex designs, particularly those using switches, are inefficient for offset cancellation in near/subthreshold voltage regions, as switches exacerbate offset voltage issues.
Purpose of the Study:
- To propose a novel and simplified sensing circuit for NV-FFs operating in low voltage regions.
- To improve the restore yield of NV-FFs by addressing the limitations of complex offset cancellation designs.
Main Methods:
- Introduction of a cross-coupled NMOS-based sensing circuit (CCN-SC).
- The proposed design adheres to a 'simplest is the best' philosophy for improved performance.
- Experimental validation using a 65 nm test chip.
Main Results:
- The CCN-SC demonstrated a restore yield improvement of over 25 times at a 0.35 V supply voltage compared to cross-coupled inverter-based sensing circuits.
- This improvement was achieved in NV-FFs operating in the near/subthreshold voltage region.
- The proposed circuit exhibited 18 times higher power consumption.
Conclusions:
- The novel CCN-SC offers a significant improvement in restore yield for NV-FFs at low operating voltages.
- The simplified design approach proves effective where complex methods fail.
- While power consumption is higher, the yield enhancement addresses a critical challenge in subthreshold operation.
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