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Nanometer-Scale Ge-Based Adaptable Transistors Providing Programmable Negative Differential Resistance Enabling

Masiar Sistani1, Raphael Böckle1, David Falkensteiner1

  • 1Institute of Solid State Electronics, TU Wien, 1040 Vienna, Austria.

ACS Nano
|October 27, 2021
PubMed

Keywords:
adaptive electronicsgermaniumheterostructuresnanowiresnegative differential resistancereconfigurable transistor

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