Related Experiment Video
Updated: Oct 15, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
High performance near-infrared phototransistors via enhanced electron trapping effect
Xingyu Jiang1, Jie Lu1, Di Xue1
1Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, 199 Ren'ai Road, Suzhou, 215123, Jiangsu, P. R. China. chilf@suda.edu.cn.
Abstract:
A high performance near-infrared organic phototransistor is achieved via introducing a small molecule acceptor as an electron trapping site into the narrow-bandgap conjugated polymer films. With only 10% (wt) addition of the acceptor molecule, the photoresponse to light of 850 nm has been significantly improved with a best photoresponsivity up to 2000 A W-1, high detectivity of 1016 Jones and fairly good photosensitivity in the order of 106.

