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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Ohmic Contact to Two-Dimensional Nanofabricated Silicon Structures with a Two-Probe Scanning Tunneling Microscope.

Jo Onoda¹, Ali Khademi², Robert A Wolkow^1,3

¹Department of Physics, University of Alberta, Edmonton, Alberta T6G 2J1, Canada.

|November 15, 2021

Summary

Researchers developed an Ohmic two-probe scanning tunneling microscope (STM) technique to precisely measure surface conductivity on silicon. This method enables detailed characterization of nanoscale structures and their electronic properties.

Keywords:

Ohmic contact multiprobe nanofabricated structures scanning tunneling microscopy silicon two-dimensional conduction two-probe

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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

Area of Science:

Surface Science
Nanotechnology
Condensed Matter Physics

Background:

Resistive contacts hinder accurate electrical characterization of nanostructures.
Scanning tunneling microscopy (STM) is a powerful tool for fabricating and probing nanoscale materials.
Understanding surface conductivity is crucial for developing novel electronic devices.

Purpose of the Study:

To develop and validate an Ohmic two-probe STM (2P-STM) technique for precise electrical characterization of silicon nanostructures.
To clarify the surface conductivity of the Si(111)-(7 × 7) surface.
To demonstrate the utility of Ohmic 2P-STM for evaluating nanostructure properties and its potential for atomic-scale circuitry.

Main Methods:

Fabrication of nanostructures on Si surfaces using STM lithography.
Overcoming resistive contacts via field evaporation for Ohmic tip apex cleaning.
Electrical characterization using a two-probe STM (2P-STM) with Ohmic contact at low bias.
Comparison of Ohmic 2P-STM with a one-probe STM for conductance measurements.

Main Results:

Established Ohmic contact for low-bias measurements, isolating surface conduction.
Successfully clarified the surface conductivity of the Si(111)-(7 × 7) surface.
Demonstrated that Ohmic one-probe STM can substitute for Ohmic 2P-STM for conductance measurements.
Validated the conventional sheet model for describing the diffusive 2D conduction in fabricated nanostructures.
Evaluated constrictions and breaks within 2D nanostructures.

Conclusions:

Ohmic 2P-STM provides a reliable method for investigating surface conductivity and nanostructure properties.
The technique is suitable for exploring atomic-scale circuitry and advanced materials science.
Diffusive two-dimensional conduction is confirmed on the Si surface for fabricated nanostructures.