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Electronic Control of Silicon Surface Atomic Structures with Two-Probe Scanning Tunneling Microscopy.

Jo Onoda1, Lucian Livadaru2, Robert A Wolkow2,3

  • 1Department of Physics, University of Teacher Education Fukuoka, Akamabunnkyo-machi 1-1, Munakata, Fukuoka 811-4192, Japan.

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Summary

Minority carrier injection into silicon substrates effectively controls dangling bonds (DBs) on surfaces. This technique overcomes challenges in studying atomic-scale devices on low-conductivity materials using scanning tunneling microscopy (STM).

Keywords:
band bendingdangling bondhole injectionsilicontwo-probe scanning tunneling microscopy

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Area of Science:

  • Surface Science
  • Materials Science
  • Nanotechnology

Background:

  • Dangling bonds (DBs) on H-terminated Si(100) surfaces are crucial for atomic-scale device research.
  • Characterizing DBs on low-conductivity silicon substrates with scanning tunneling microscopy (STM) is challenging due to carrier screening and long mean-free paths.

Purpose of the Study:

  • To investigate the effects of minority carrier (hole) injection on dangling bonds (DBs) on H-terminated Si(100) surfaces using two-probe STM.
  • To explore methods for overcoming measurement challenges on low-conductivity silicon substrates for atomic-scale device characterization.

Main Methods:

  • Utilized a two-probe scanning tunneling microscope (STM) setup.
  • One probe performed surface characterization, while a second probe injected minority carriers (holes) into the n-type Si substrate.
  • Analyzed the impact of hole injection on DB charge states and STM imaging characteristics.

Main Results:

  • Injected holes migrated to negate band bending in STM imaging areas, achieving a steady state.
  • The average charge states of DBs were controllable by varying the amount of injected holes.
  • Hole injection induced shifts in STM apparent imaging bias and revealed additional gap states in I-V measurements for DB islands.

Conclusions:

  • Minority carrier injection is an effective strategy for controlling DBs and overcoming measurement limitations on low-conductivity silicon.
  • These findings provide critical insights for the development and understanding of atomic-scale devices fabricated on such substrates.