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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Switching of BJT01:22

Switching of BJT

Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are reverse-biased. The...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...

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Related Experiment Video

Updated: Jun 23, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Graphene/AlGaN/GaN RF Switch.

Yevhen Yashchyshyn1,2, Paweł Bajurko1, Jakub Sobolewski1

  • 1Institute of Radioelectronics and Multimedia Technology, Warsaw University of Technology, 00-665 Warsaw, Poland.

Micromachines
|November 27, 2021
PubMed
Summary

New radio frequency (RF) switches combine graphene and 2D electron gas for high-frequency applications up to 114.5 GHz. These switches offer fast switching times and potential for significant bandwidth in time-modulated systems.

Keywords:
AlGaN/GaNgraphenemillimeter-wave devicesswitchestwo-dimensional high-density electron gas

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • Radio frequency (RF) switches are crucial components in modern electronic systems.
  • Existing RF switch technologies face limitations in high-frequency performance and integration.
  • Graphene and AlGaN/GaN systems offer promising properties for advanced electronic devices.

Purpose of the Study:

  • To propose and investigate novel RF switches utilizing graphene and a two-dimensional high-density electron gas (2DEG) in the AlGaN/GaN system.
  • To evaluate the performance of these switches across a wide frequency range (10 MHz to 114.5 GHz).
  • To assess the integration compatibility and potential applications in time-modulated systems.

Main Methods:

  • Fabrication of RF switches integrating graphene and 2DEG within a coplanar waveguide structure.
  • Measurement of switch performance, including on-state insertion losses, switching times, and on-off ratio.
  • Characterization across a broad frequency spectrum from 10 MHz to 114.5 GHz.
  • Development of an equivalent circuit model to describe switching characteristics.

Main Results:

  • Switches demonstrated functionality from 10 MHz to 114.5 GHz, with on-state insertion losses ranging from 7.4 to 19.4 dB.
  • An approximate 4 dB on-off ratio was observed above 70 GHz, indicating continued switching capability.
  • Fast switching times were achieved, with rise and fall times around ~25 ns and ~17 ns, respectively.
  • The switches can provide up to 20 MHz of bandwidth in time-modulated systems.

Conclusions:

  • The proposed graphene and 2DEG RF switches are effective across a wide frequency range, including millimeter-wave frequencies.
  • Integration into coplanar waveguides simplifies system implementation and avoids matching issues.
  • The demonstrated performance, particularly bandwidth in time-modulated systems, is significant.
  • The developed equivalent circuit model aids in the design of optimized switches for specific applications.