Related Experiment Video
Updated: Oct 12, 2025

A High-Throughput Comet Assay Approach for Assessing Cellular DNA Damage
Published on: May 10, 2022
CoMeT: Configurable Tagged Memory Extension
Jinjae Lee1, Derry Pratama1, Minjae Kim1
1Information Security and AIoT Laboratory, School of Computer Science & Engineering, Pusan National University, Busan 46241, Korea.
Abstract:
Commodity processor architectures are releasing various instruction set extensions to support security solutions for the efficient mitigation of memory vulnerabilities. Among them, tagged memory extension (TME), such as ARM MTE and SPARC ADI, can prevent unauthorized memory access by utilizing tagged memory. However, our analysis found that TME has performance and security issues in practical use. To alleviate these, in this paper, we propose CoMeT, a new instruction set extension for tagged memory. The key idea behind CoMeT is not only to check whether the tag values in the address tag and memory tag are matched, but also to check the access permissions for each tag value. We implemented the prototype of CoMeT on the RISC-V platform. Our evaluation results confirm that CoMeT can be utilized to efficiently implement well-known security solutions, i.e., shadow stack and in-process isolation, without compromising security.
Related Concept Videos
Understanding Memory
System of Memory
Flashbulb Memory
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Clamper Circuit
Within this circuit, the diode's orientation prompts the capacitor to charge up to the level of the most negative peak of the input signal. Upon reaching this state, the diode ceases to...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...

