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Published on: April 12, 2018
Electrostatic Field-Driven Supercurrent Suppression in Ionic-Gated Metallic Superconducting Nanotransistors
Federico Paolucci1, Francesco Crisá2, Giorgio De Simoni1
1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy.
Researchers demonstrate electrostatic field control over superconductivity in niobium nanotransistors. This ionic-gated superconducting field-effect nanotransistor (ISFET) study confirms electric field effects, not quasiparticle injection, influencing supercurrent.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Gate voltage tuning of metallic nanosuperconductors' transport properties has sparked debate.
- Competing theories include unconventional electric field-effect and quasiparticle injection.
Purpose of the Study:
- To provide conclusive evidence for electrostatic field control of supercurrent in metallic nanosized superconductors.
- To differentiate between electric field-effect and quasiparticle injection mechanisms.
Main Methods:
- Fabrication and characterization of ionic-gated superconducting field-effect nanotransistors (ISFETs) using niobium (Nb).
- Utilizing ISFETs to prevent electron injection, isolating the electric field effect.
Main Results:
- Demonstrated giant suppression of superconducting critical current by up to ~45% in Nb ISFETs.
- Observed bipolar supercurrent suppression.
- Noted invariant critical temperature and normal-state resistance, ruling out charge accumulation/depletion.
Conclusions:
- Conclusively established electrostatic field-driven control of supercurrent in metallic nanosized superconductors.
- The findings necessitate a new theoretical framework for static electric field interactions with conventional superconductivity.
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