Dislocation Defect Layer-Induced Magnetic Bi-states Phenomenon in Epitaxial La0.7Sr0.3MnO3(111) Thin Films
Yanan Zhao1, Yaojin Li1, Chen Chen1
1Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic and Information Engineering, State Key Laboratory for Mechanical Behavior of Materials, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi'an Jiaotong University (Yantai) Research Institute For Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an 710049, China.
Abstract:
La0.7Sr0.3MnO3 (LSMO) is one of the most fascinating strongly correlated oxides in which the spin polarization and magnetic property are sensitive to strain, especially in the (111)-oriented LSMO. In the paper, epitaxial LSMO(111) thin films with different thicknesses were prepared, and they showed continuous dislocation defect arrays with thickness greater than 45 nm. Then, the thick LSMO(111) films were divided into a double-layer structure with two slightly different oriented cells. The LSMO(111) films present a stronger lattice-spin coupling, thus the double-layer structure triggers an obvious magnetic heterogeneity phenomenon (magnetic bi-states) by the way of creating a double-mode ferromagnetic resonance (FMR) spectrum. Therefore, the nanostructures, especially the ordered structure defects, may trigger enriched physical phenomena and offer new forms of spin coupling and device functionality in strain-sensitive strongly correlated oxide systems.
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