Light-activated Multilevel Resistive Switching Storage in Pt/Cs₂AgBiBr₆/ITO/Glass Devices

Area of Science:

• Materials Science
• Solid-State Physics
• Device Engineering

Background:

• Cesium silver bismuth bromide (Cs2AgBiBr6) is a promising material for optoelectronic applications.
• Resistive switching memory devices offer potential for high-density data storage.

Purpose of the Study:

• To investigate the resistive switching behavior of Cs2AgBiBr6 films under light irradiation.
• To explore the underlying mechanisms responsible for the observed switching characteristics.
• To assess the potential of Cs2AgBiBr6 for high-density memory applications.

Main Methods:

• Fabrication of Cs2AgBiBr6 thin films using a low-temperature sol-gel method.
• Characterization of device performance, including resistance states and stability under illumination.
• Analysis of electrical properties, valence states, and absorption spectra to elucidate switching mechanisms.

Main Results:

• Uniform Cs2AgBiBr6 films were successfully prepared on ITO substrates.
• Stable tristate bipolar resistance switching was observed in Pt/Cs2AgBiBr6/ITO devices under 445 nm light irradiation.
• A high resistance ratio of approximately 500 was achieved, with stable operation over 1200 seconds.

Conclusions:

• The resistive switching is attributed to bromine vacancies and a trap-controlled space charge-limited current mechanism.
• The Schottky-like barrier at the Pt/Cs2AgBiBr6 interface influences the photoelectrical properties and tristate switching.
• Cs2AgBiBr6-based devices show significant potential for developing next-generation high-density memory.