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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Secure Electronics Enabled by Atomically Thin and Photosensitive Two-Dimensional Memtransistors.

Aaryan Oberoi1, Akhil Dodda1, He Liu2

  • 1Deparment of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802, United States.

ACS Nano
|December 16, 2021
PubMed
Summary
This summary is machine-generated.

This study introduces a novel hardware security platform using 2D memtransistors to combat compromised integrated circuits (ICs). The energy-efficient system offers bottom-up solutions for IC security, enhancing supply chain reliability.

Keywords:
anticounterfeitinghardware securityintegrated circuit camouflagingintellectual property watermarkingmemtransistorphysically unclonable functiontwo-dimensional materials

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Area of Science:

  • Hardware security
  • Integrated circuit (IC) supply chain security
  • Non-von Neumann architectures

Background:

  • The increasing prevalence of security-compromised hardware in the IC supply chain presents a significant global risk to critical systems.
  • Existing top-down security approaches are often inefficient, costly, and inconclusive, highlighting the need for innovative solutions.

Purpose of the Study:

  • To develop an energy and area-efficient hardware platform for comprehensive, bottom-up IC security.
  • To leverage the unique properties of 2D memtransistors for robust security primitives.

Main Methods:

  • Utilized atomically thin two-dimensional memtransistors with inherent device-to-device variation, electrical programmability, and persistent photoconductivity.
  • Implemented a non-von Neumann hardware architecture for enhanced efficiency.
  • Developed diverse security primitives including physically unclonable functions, anticounterfeit measures, IP watermarking, and IC camouflaging.

Main Results:

  • Successfully realized diverse security primitives on the novel hardware platform.
  • Demonstrated effective prevention of false authentication, detection of recycled/remarked ICs, protection against IP theft, and mitigation of reverse engineering.
  • Achieved energy and area efficiency in the proposed security solutions.

Conclusions:

  • The developed 2D memtransistor-based non-von Neumann platform offers a promising and efficient approach to securing the IC supply chain.
  • This bottom-up strategy effectively addresses limitations of traditional security methods, enhancing IC reliability and protecting intellectual property.