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Updated: Oct 9, 2025

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Published on: November 1, 2013
How Materials and Device Factors Determine the Performance: A Unified Solution for Transistors with Nontrivial Gates
Chuan Liu1, Xiaojie Li1, Yiyang Luo1
1State Key Laboratory of Optoelectronic Materials and Technologies and the Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou, 510006, China.
Abstract:
Advanced field-effect transistors (FETs) with nontrivial gates (e.g., offset-gates, mid-gates, split-gates, or multi-gates) or hybrid integrations (e.g., with diodes, photodetectors, or field-emitters) have been extensively developed in pursuit for the "More-than-Moore" demand. But understanding their conduction mechanisms and predicting current-voltage relations is rather difficult due to countless combinations of materials and device factors. Here, it is shown that they could be understood within the same physical picture, i.e., charge transport from gated to nongated semiconductors. One proposes an indicator based on material and device factors for characterizing the transport and derives a unified and simplified solution for describing the current-voltage relations, current saturation, channel potentials, and drift field. It is verified by simulations and experiments of different types of devices with varied materials and device factors, employing organic, oxide, nanomaterial semiconductors in transistors or hybrid integrations. The concise and unified solution provides general rules for quick understanding and designing of these complex, innovative devices.
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