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Related Concept Videos

Characteristics of MOSFET01:17

Characteristics of MOSFET

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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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MOSFET: Enhancement Mode01:22

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

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Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Small-Signal Analysis of MOSFET Amplifiers01:23

Small-Signal Analysis of MOSFET Amplifiers

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
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Related Experiment Video

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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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New Submicron Low Gate Leakage In0.52Al0.48As-In0.7Ga0.3As pHEMT for Low-Noise Applications.

Mohamed Fauzi Packeer Mohamed1, Mohamad Faiz Mohamed Omar2, Muhammad Firdaus Akbar Jalaludin Khan1

  • 1School of Electrical and Electronic Engineering, Universiti Sains Malaysia, Nibong Tebal 14300, Pulau Pinang, Malaysia.

Micromachines
|December 24, 2021
PubMed
Summary

This study introduces novel InGaAs/InAlAs/InP pseudomorphic high electron mobility transistors (pHEMTs) with improved epilayer structures and submicron T-gate technology. The new design significantly reduces gate current leakage and enhances breakdown voltage for better low-noise amplifier performance.

Keywords:
2DEGIII-V materialInAlAsInGaAsInPLNAMBEMMIClow temperature (LT)pHEMTsemiconductor device

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Area of Science:

  • Semiconductor Device Physics
  • Materials Science
  • Radio Frequency (RF) Engineering

Background:

  • Conventional pseudomorphic high electron mobility transistors (pHEMTs) using InGaAs/InAlAs/InP structures offer high mobility but suffer from low breakdown voltage and high gate leakage.
  • These limitations, stemming from impact ionization in the InGaAs channel, hinder performance in low-noise amplifiers (LNAs) and limit high-frequency operation.
  • Existing fabrication methods using 1 μm gate lengths restrict further performance gains.

Purpose of the Study:

  • To develop advanced InGaAs/InAlAs epilayer structures and submicron T-gate fabrication processes for pHEMTs.
  • To significantly improve device performance, specifically reducing gate current leakage and increasing breakdown voltage.
  • To enhance radio frequency (RF) characteristics, including unity current gain frequency (fT) and maximum oscillation frequency (fmax).

Main Methods:

  • Design and fabrication of novel InGaAs/InAlAs/InP epilayer structures utilizing band gap engineering.
  • Optimization of a submicron T-gate length process with a new technique for scaling the bottom gate opening.
  • Utilized I-line optical lithography for cost-effective submicron gate fabrication.

Main Results:

  • Achieved a 90% reduction in gate current leakage compared to conventional designs.
  • Demonstrated a 70% improvement in breakdown voltage.
  • Observed a 58% increase in fT and a 33% increase in fmax with the submicron T-gate process.

Conclusions:

  • The new epilayer structure and submicron T-gate process offer a significant performance enhancement over conventional pHEMTs.
  • These advancements address key limitations, enabling excellent low-noise applications.
  • The cost-effective submicron gate fabrication facilitates practical implementation in MMIC LNAs.