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Enhancing AlN PMUTs' Acoustic Responsivity within a MEMS-on-CMOS Process.

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This study optimizes piezoelectrical micromachined ultrasound transducers (PMUTs) on CMOS technology. Buckling, often detrimental, enhances PMUT performance when electrodes are strategically placed, improving acoustic pressure generation and reception.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Acoustics

Background:

  • Piezoelectrical micromachined ultrasound transducers (PMUTs) are crucial for various applications.
  • Optimizing PMUTs integrated with CMOS technology is essential for enhanced performance.
  • Residual stress in thin layers can cause membrane buckling, potentially degrading performance.

Purpose of the Study:

  • To develop guidelines for optimizing monolithically integrated PMUTs on CMOS technology.
  • To investigate the impact of thin AlN piezoelectric layers and Si3N4 passive layers on acoustic pressure.
  • To explore the effect of residual stress-induced buckling on PMUT performance.

Main Methods:

  • Finite Element Modeling (FEM) simulations were employed to study PMUT behavior.
  • Experimental characterization was conducted on fabricated PMUTs.
  • Optimization strategies focused on electrode placement to leverage membrane buckling.

Main Results:

  • PMUTs with thin AlN and Si3N4 layers were simulated and characterized.
  • It was demonstrated that membrane buckling, due to residual stress, can be beneficial for PMUT performance.
  • Fabricated PMUTs showed enhanced transmitter (5 kPa V⁻¹) and receiver (12.5 V MPa⁻¹) capabilities.

Conclusions:

  • Guidelines for optimizing CMOS-integrated PMUTs were established.
  • Strategic electrode placement can harness residual stress-induced buckling for improved PMUT efficiency.
  • The developed PMUTs outperform previous devices on the same technology and state-of-the-art alternatives.