Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Bipolar Junction Transistor01:22

Bipolar Junction Transistor

997
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
997
Working Principle of BJT01:15

Working Principle of BJT

771
A Bipolar Junction Transistor (BJT), specifically a PNP transistor in a common-base configuration, effectively amplifies or switches electronic signals by controlling the flow of charge carriers. This discussion focuses on its operation in the active mode.
In the PNP configuration, the emitter is heavily doped with positive charge carriers (holes), while the base is lightly doped with negative carriers (electrons). This setup allows for a forward bias across the emitter-base junction,...
771
Photoelectric Effect02:26

Photoelectric Effect

35.1K
When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
35.1K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Bridging the p-type gap in oxide electronics with 2D semiconductors.

Communications engineering·2026
Same author

Mastoid Obliteration After Canal Wall Down Mastoidectomy Using Tissue Engineering Approaches with Polymers, Mesenchymal Stem Cells, and Bioactive Molecules: A Systematic Review.

Bioengineering (Basel, Switzerland)·2026
Same author

Recent progress in HfO<sub>2</sub>-based ferroelectric devices with oxide semiconductor channels: a comprehensive review.

Nanoscale advances·2026
Same author

Direct Mapping of Crystallization-Induced Trap-State Modulation and Its Impact on Local Carrier Mobilities in Indium Oxide Thin-Film Transistors.

Nano letters·2026
Same author

Oxide semiconductor gain cell-embedded memory: materials and integration strategies for next generation on-chip memory.

Communications engineering·2026
Same author

Optoelectronic Characterization of Trap Density of States in Indium Gallium Oxide Thin-Film Transistors and Their Impact on Bias Stability.

ACS applied materials & interfaces·2026

Related Experiment Video

Updated: Oct 7, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.9K

High-Performance Broadband Phototransistor Based on TeO/IGTO Heterojunctions.

Hongwei Xu1, Taikyu Kim1, HeeSung Han1

  • 1Department of Electronic Engineering, Hanyang University, Seoul 04763, Republic of Korea.

ACS Applied Materials & Interfaces
|January 10, 2022
PubMed
Summary
This summary is machine-generated.

We developed a novel heterostructure using tellurium oxide (TeO₂) and InGaSnO (IGTO) for broadband photodetection. This material demonstrates high sensitivity across ultraviolet to infrared spectra, enabling advanced optoelectronic devices.

Keywords:
heterojunctionindium gallium tin oxideinfrared sensorphototransistortellurium oxidethin-film transistor (TFT)

More Related Videos

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

15.0K
Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

9.1K

Related Experiment Videos

Last Updated: Oct 7, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
09:59

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors

Published on: June 23, 2018

7.9K
Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
10:54

Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters

Published on: July 8, 2013

15.0K
Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes
07:44

Production and Characterization of Vacuum Deposited Organic Light Emitting Diodes

Published on: November 16, 2018

9.1K

Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Broadband spectral detection is crucial for high-performance photodetection.
  • Developing materials with wide spectral response remains a significant technological challenge.

Purpose of the Study:

  • To create a low-temperature processed heterostructure for efficient broadband photodetection.
  • To investigate the photoelectric properties of a TeO₂/IGTO heterostructure.

Main Methods:

  • Fabrication of a 9 nm TeO₂ and 8 nm IGTO heterostructure at 150 °C.
  • Characterization of the heterostructure's optical absorption and photoelectric performance.
  • Evaluation of photosensor performance under blue light (450 nm) and infrared irradiation (970 nm).

Main Results:

  • The TeO₂/IGTO heterostructure exhibits broadband absorption from 300-1500 nm.
  • Achieved remarkable detectivity (1.6 × 10¹³ Jones), responsivity (84 A/W), and photosensitivity (1 × 10⁵) under blue light.
  • Demonstrated modest infrared detection (responsivity: ~31 A/W, detectivity: ~6 × 10¹¹ Jones), confirming broadband capability.

Conclusions:

  • The TeO₂/IGTO heterostructure shows potential for high-performance broadband phototransistors.
  • Low-temperature processability enables the design of flexible and stable array optoelectronic devices.
  • This work advances the development of sensitive, wide-spectrum optoelectronic sensing materials.