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Sensitive Metal-Semiconductor Nanothermocouple Fabricated by FIB to Investigate Laser Beams with Nanometer Spatial
Adam Łaszcz1, Andrzej Czerwinski1, Emilia Pruszyńska-Karbownik2
1Łukasiewicz Research Network, Institute of Microelectronics and Photonics, Al. Lotników 32/46, 02-668 Warsaw, Poland.
Sensors (Basel, Switzerland)
|January 11, 2022
Summary
Focused ion beam fabrication created a highly sensitive platinum-silicon nanothermocouple. This method offers a simpler alternative to traditional semiconductor manufacturing for advanced temperature sensing applications.
Area of Science:
- Materials Science
- Nanotechnology
- Physics
Background:
- Traditional nanothermocouple fabrication requires specialized semiconductor manufacturing facilities.
- Focused Ion Beam (FIB) systems offer a more accessible fabrication route for nanodevices.
- Metal-semiconductor nanothermocouples present an alternative to metal-metal structures.
Purpose of the Study:
- To fabricate a novel metal-semiconductor nanothermocouple using FIB.
- To evaluate the sensitivity and response of the nanothermocouple to thermal stimuli.
- To explore the potential applications of FIB-fabricated nanothermocouples in laser beam characterization.
Main Methods:
- Fabrication of a platinum-silicon (Pt-Si) nanothermocouple with a 90 nm nanojunction using Focused Ion Beam (FIB).
- Characterization of the nanothermocouple's response to a stream of hot air for temperature sensing.
- Analysis of the nanothermocouple's nonlinear response to an argon-laser beam with high optical power density.
- Laser annealing of metal-semiconductor interfaces using the argon laser.
Main Results:
- The Pt-Si nanothermocouple exhibited a Seebeck coefficient up to 140 µV/K, showing 10 times higher sensitivity than typical metal-metal nanothermocouples.
- A linear response was observed for temperature measurements using hot air, enabling sensitive detection of small temperature changes.
- A nonlinear response up to 83.85 mV was recorded under high-power argon laser irradiation.
- The FIB fabrication process is accessible in standard research labs and can be performed quickly by a single operator.
Conclusions:
- FIB is a viable and accessible technique for fabricating high-sensitivity metal-semiconductor nanothermocouples.
- These nanothermocouples demonstrate potential for accurate temperature measurements and laser beam characterization at the nanoscale.
- Further improvements in FIB processing, such as using different metal sources, could enhance the Seebeck coefficient even more.
Keywords:
Seebeck coefficientfocused ion beam (FIB)laser annealingmetal-semiconductor thermocouplethermoelectric nanostructure
