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Wafer-scale single-orientation 2D layers by atomic edge-guided epitaxial growth
Yi Wan1,2, Jui-Han Fu3, Chih-Piao Chuu4
1International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China. yumeng.shi@szu.edu.cn.
Chemical Society Reviews
|January 11, 2022
Summary
Synthesizing wafer-scale single-crystal 2D materials for nanoelectronics requires controlling nucleation. Atomic edge-guided epitaxial growth offers a reproducible method for achieving single-orientation 2D layers, overcoming a key bottleneck.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- Two-dimensional (2D) layered materials offer unique properties for next-generation nanoelectronics beyond silicon.
- Reproducible wafer-scale single-crystal film growth remains a significant challenge for 2D material applications.
Purpose of the Study:
- To systematically summarize critical factors for synthesizing single-orientation 2D layers.
- To highlight atomic edge-guided epitaxial growth as a key technique for wafer-scale single-crystal 2D material synthesis.
Main Methods:
- Review of critical factors including crystal/substrate symmetry and energy considerations.
- Focus on atomic edge-guided epitaxial growth mechanisms.
Main Results:
- Identification of key parameters for controlled synthesis of single-orientation 2D layers.
- Demonstration of atomic edge-guided epitaxial growth enabling unidirectional nucleation.
Conclusions:
- Achieving wafer-scale single-crystal 2D films is crucial for post-silicon nanoelectronics.
- Atomic edge-guided epitaxial growth provides a viable pathway for reproducible synthesis of high-quality 2D materials.
