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Updated: Oct 7, 2025

09:49
In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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Correction to: Light-Activated Multilevel Resistive Switching Storage in Pt/Cs2AgBiBr6/ITO/Glass Devices
Tingting Zhong1, Yongfu Qin1, Fengzhen Lv2
1School of Physical Science and Technology and Guangxi Key Laboratory of Nuclear Physics and Technology, Guangxi Normal University, Yucai Road, Guilin, 541000, China.
Nanoscale Research Letters
|January 12, 2022
Abstract
No abstract available in PubMed .
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