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Updated: Oct 6, 2025

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Modeling electronic and optical properties of III-V quantum dots-selected recent developments
Alexander Mittelstädt1, Andrei Schliwa2, Petr Klenovský3,4
1Institute for Solid State Physics, Technical University of Berlin, Hardenbergstrasse 36, D-10623, Berlin, Germany.
Abstract:
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed "linear combination of quantum dot orbitals" method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1-xGax AsySb1-y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.
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