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Updated: Jan 27, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Martin Podhorský1, Maximilian Klonz1, Lux Böhmer1
1Institut für Physik Und Astronomie, Technische Universität Berlin, Hardenbergstraße 36, Berlin D-10623, Germany.
Researchers developed a method for precisely controlling the placement and density of Indium Gallium Arsenide (InGaAs) quantum dots. This breakthrough enables the creation of integrated photonic chips for advanced quantum technologies.
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