Related Experiment Video
Updated: Oct 6, 2025

Determination of the Excitation and Coupling Rates Between Light Emitters and Surface Plasmon Polaritons
Published on: July 21, 2018
Anisotropic Radiation in Heterostructured "Emitter in a Cavity" Nanowire
Alexey Kuznetsov1, Prithu Roy2, Valeriy M Kondratev1
1Center for Nanotechnologies, Alferov University, Khlopina 8/3, 194021 Saint Petersburg, Russia.
Abstract:
Tailorable synthesis of axially heterostructured epitaxial nanowires (NWs) with a proper choice of materials allows for the fabrication of novel photonic devices, such as a nanoemitter in the resonant cavity. An example of the structure is a GaP nanowire with ternary GaPAs insertions in the form of nano-sized discs studied in this work. With the use of the micro-photoluminescence technique and numerical calculations, we experimentally and theoretically study photoluminescence emission in individual heterostructured NWs. Due to the high refractive index and near-zero absorption through the emission band, the photoluminescence signal tends to couple into the nanowire cavity acting as a Fabry-Perot resonator, while weak radiation propagating perpendicular to the nanowire axis is registered in the vicinity of each nano-sized disc. Thus, within the heterostructured nanowire, both amplitude and spectrally anisotropic photoluminescent signals can be achieved. Numerical modeling of the nanowire with insertions emitting in infrared demonstrates a decay in the emission directivity and simultaneous rise of the emitters coupling with an increase in the wavelength. The emergence of modulated and non-modulated radiation is discussed, and possible nanophotonic applications are considered.
More Related Videos
Related Concept Videos
Standing Waves in a Cavity
Dual Nature of Electromagnetic (EM) Radiation
Wavelength is the distance between two consecutive peaks (the highest point) or troughs (the lowest point) in the wave. Frequency is the...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

